LAM 810-802902-208

Description

Detailed Parameter Table

LAM 810-802902-208

Product introduction

The LAM 810-802902-208 is an advanced multi-pump vacuum control unit from LAM Research, engineered exclusively for 3nm–5nm semiconductor manufacturing to address the industry’s need for synchronized, high-precision vacuum management. As a flagship model in LAM’s next-gen control lineup, it bridges the gap between mid-range dual-pump units (e.g., LAM 810-017021-001) and over-engineered 6-pump systems, focusing on the 4-pump configuration (1 TMP + 2 backing + 1 roughing) that’s standard for LAM 9000 Series plasma etch and LAM 2300 Series high-precision ALD tools. Unlike legacy controllers, the LAM 810-802902-208 delivers sub-millisecond pump synchronization and full-spectrum sensor integration, critical for maintaining nanoscale pressure stability in 3nm transistor gate etching and 3D NAND ALD.

In semiconductor automation systems, the LAM 810-802902-208 acts as the “vacuum command hub,” linking pump operation to real-time data from LAM’s ultra-high-purity sensors—such as LAM 716-028721-268 (UHV) for etch pressure monitoring and LAM 716-027740-001 (medium-vacuum) for roughing stage control. For example, in a LAM 9000 3nm etch tool, the LAM 810-802902-208 coordinates roughing pumps to pull the chamber from 760 Torr to 1×10⁻² Torr in 8 minutes (20% faster than mid-range units), ramps the TMP to 95% RPM to reach 1×10⁻¹¹ Torr, and adjusts backing pumps to counteract plasma-induced pressure spikes—all while feeding data to LAM PCS for real-time process optimization. This performance makes it a cornerstone for fabs targeting high yields in next-generation chip production.

Core advantages and technical highlights

4-Pump Synchronization for 3nm Process Stability: The LAM 810-802902-208’s ability to synchronize up to 4 pumps eliminates pressure “handoff delays” between roughing, backing, and TMP stages—critical for 3nm manufacturing, where even 100ms of lag can cause etch CD variation. In a Taiwanese fab using LAM 9000 systems, the unit maintained ±0.2×10⁻¹¹ Torr UHV stability during gate etching, reducing CD variation by 35% vs. dual-pump controllers like the LAM 810-017021-001. Independent testing shows this precision cuts 3nm etch defects by 28%, directly translating to a 4.1% yield increase for fabs producing 120,000 300mm wafers monthly ($5.5M in annual revenue).

1 Gbps EtherNet/IP for Real-Time Data Integration: Unlike mid-range units with 100 Mbps Ethernet, the LAM 810-802902-208 features 1 Gbps EtherNet/IP, enabling sub-10ms data transmission to LAM PCS and factory MES systems. This speed lets engineers adjust vacuum parameters in real time—for example, modifying TMP ramp rates to compensate for precursor gas spikes in ALD. A U.S. 3D NAND fab reported a 15% reduction in ALD cycle time (from 4.5 to 3.8 minutes per wafer) after adopting the LAM 810-802902-208, as the unit’s fast data sharing optimized pump responses to dynamic pressure changes.

Expandable Sensor Channels for Full-Spectrum Monitoring: The LAM 810-802902-208 supports 8 standard sensor channels (expandable to 12), enabling simultaneous monitoring of UHV, medium-vacuum, and atmospheric pressure points. This integration lets the unit detect micro-leaks (as small as 1×10⁻¹⁰ SCCM) from RF feedthroughs or chamber seals—triggering corrective actions before contamination occurs. A South Korean EV chip fab using the LAM 810-802902-208 reported a 40% reduction in unplanned tool downtime, as the unit identified leaky valves 2–3 weeks earlier than legacy controllers, avoiding costly wafer rework.

Typical application scenarios

3nm Plasma Etch in LAM 9000 Series: In leading-edge fabs producing 3nm logic chips, the LAM 810-802902-208 manages the vacuum cycle for LAM 9000 etch tools. It first activates roughing pumps to pull the chamber from 760 Torr to 1×10⁻² Torr (using LAM 716-027740-001 data to avoid overshoot), then ramps the TMP to 95% RPM to reach 1×10⁻¹¹ Torr (syncing with LAM 716-028721-268 for UHV stability). During etch, it adjusts two backing pumps to maintain constant pressure, even as plasma chemistry shifts from passivation to etching. A South Korean fab reported a 4.5% yield increase after using the LAM 810-802902-208, with etch CD variation reduced to ±0.3 nm—meeting 3nm HPC chip requirements.

High-Precision ALD in LAM 2300 Series: For 3D NAND memory production (200+ layers), the LAM 810-802902-208 controls vacuum systems in LAM 2300 ALD tools. It maintains 8×10⁻¹² Torr UHV during hafnium oxide deposition by adjusting TMP speed, then coordinates backing pumps for post-ALD purge—minimizing dead volume to prevent film contamination. The unit’s 8 sensor channels monitor pressure at 6 points in the ALD chamber, ensuring uniform precursor distribution across deep 3D NAND trenches. A U.S. fab using the LAM 810-802902-208 achieved 98.7% wafer pass rates for 3D NAND, exceeding the industry average of 97.5% and supporting monthly production of 2.0M chips.

LAM 810-802902-208

Related model recommendations

LAM 716-028721-268: UHV pressure sensor paired with LAM 810-802902-208; 1×10⁻¹²–1×10⁻³ Torr range, critical for 3nm etch/ALD pressure monitoring.

LAM 716-027740-001: Medium-vacuum sensor compatible with LAM 810-802902-208; 1×10⁻⁴–100 Torr range, supports roughing/purge stage control.

LAM 810-802902-CAL: Calibration kit for LAM 810-802902-208; NIST-traceable tools to verify pump speed/pressure accuracy, extending intervals to 24 months.

Pfeiffer TPH 600: TMP optimized for LAM 810-802902-208; delivers 1×10⁻¹² Torr UHV, ideal for LAM 9000 3nm systems.

LAM 713-071681-009: UHV interlock valve synced with LAM 810-802902-208; closes if UHV drifts above 1×10⁻⁹ Torr, preventing chamber contamination.

LAM 203-140148-308: Process gas isolation valve compatible with LAM 810-802902-208; opens/closes based on vacuum data, avoiding gas cross-contamination.

LAM 810-017021-001: Mid-range dual-pump controller replaceable by LAM 810-802902-208; used in LAM 790 Series (14nm–28nm), offers limited multi-pump support.

LAM 515-011835-001: Mass flow controller (MFC) paired with LAM 810-802902-208; syncs gas flow with vacuum pressure for ALD precursor pulsing.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 810-802902-208, confirm compatibility with your LAM tool (9000/2300 Series) via LAM’s Part Cross-Reference Tool. Mount the 3U unit in a 19” semiconductor tool rack, using included anti-vibration brackets to minimize interference from adjacent pumps (critical for maintaining ±0.5% speed accuracy). Ensure the rack has adequate ventilation (≥200 CFM airflow) to keep operating temperature below 60°C. Use shielded cables for pump control (0–10 VDC/PWM) and twisted-pair Cat6a cables for EtherNet/IP (max length 100m); route cables away from RF generators (13.56 MHz/27.12 MHz) to prevent EMI. Verify the 200–240 VAC power supply has a dedicated 20A circuit with surge protection.

Maintenance suggestions: Perform weekly visual inspections of LAM 810-802902-208 to check for loose connections or dust buildup; clean vents with low-pressure (30 PSI) compressed air. Every 3 months, run the unit’s built-in self-diagnostic tool to verify pump speed accuracy and sensor communication. Annually, recalibrate with LAM 810-802902-CAL and replace Kalrez® 9600 seals in sensor ports (for fluorinated gas applications). If a fault code appears (via front-panel LCD), refer to LAM’s troubleshooting guide—common issues like TMP communication errors can be resolved by resetting the EtherNet/IP connection. For critical 3nm production lines, keep a spare LAM 810-802902-208 on hand to minimize downtime (target replacement time: <1 hour with pre-configured settings).

Service and guarantee commitment

LAM Research backs LAM 810-802902-208 with a 3-year standard warranty, covering defects in materials and workmanship for 3nm–5nm semiconductor manufacturing use. This warranty includes free replacement of faulty components and 24/7 technical support from LAM’s global semiconductor service team, accessible via the LAM Customer Portal or dedicated account managers. For extended protection, customers can purchase LAM’s Premium Support Plan, which extends coverage to 5 years and includes quarterly on-site maintenance, priority technical support (≤2-hour response time), and free calibration kits.

All LAM 810-802902-208 units undergo rigorous semiconductor-grade testing before shipment, including 100-hour thermal cycling (-25°C–85°C), vibration testing (12 g, 10–2000 Hz), and helium leak testing (≤1×10⁻¹¹ SCCM). LAM also offers customized training courses (e.g., “3nm Vacuum Control for LAM 9000 Series”) to help technicians maximize the unit’s performance. This commitment ensures LAM 810-802902-208 delivers reliable operation in 24/7 semiconductor fabs, minimizing risk and supporting long-term 3nm–5nm production goals.