Description
Detailed Parameter Table
| Parameter Name | Parameter Value |
| Product model | LAM 839-011025-1 |
| Manufacturer | LAM Research Corporation |
| Product category | Precision Gas Mass Flow Controller (MFC) Module (Mature Node 14nm–45nm Compatibility) |
| Flow Rate Range | 0–200 sccm (standard, N₂ equivalent); Custom ranges (0–50 sccm / 0–500 sccm) available for specific gases |
| Flow Accuracy | ±1.0% of full scale (FS) or ±0.5% of reading (whichever is larger); Repeatability: ±0.2% of FS |
| Gas Compatibility | Inert gases (N₂, Ar, He), reactive gases (O₂, H₂), non-corrosive etch gases (SiH₄, PH₃); Not compatible with fluorinated gases (e.g., C₄F₈, NF₃) |
| Sensor Technology | Thermal mass flow sensor (platinum resistance thermometer, dual-channel); Response time: ≤1 second (90% step response) |
| Control Interface | Analog: 0–5 V DC (flow setpoint/feedback); Digital: RS-485 (Modbus RTU, for remote configuration); Compatible with LAM PCS v5.0+ |
| Material Specifications | – Flow Body: 316L stainless steel (electropolished, Ra ≤0.1 μm, passivated per ASTM A967)- Valve Seat: PTFE (low outgassing, chemical resistance for non-corrosive gases)- Seals: Viton® FKM (non-outgassing, operating temp range: -20°C–150°C)- Sensor Tube: Hastelloy® C276 (corrosion resistance, thermal stability) |
| Operating Conditions | Temp: 5°C–50°C (ambient, temperature-compensated); Pressure: Inlet: 20–100 psig, Outlet: 5–95 psig; Humidity: 5–90% RH (non-condensing) |
| Power Requirements | 24 VDC (±10%); Power consumption: ≤15 W (idle); ≤25 W (full load, valve actuation) |
| Integration Compatibility | Natively integrates with LAM 790 Series (etch), legacy LAM 2300 Series (deposition); Works with LAM 810-017021-001 (vacuum controller), LAM 718-094756-081 (wafer temperature module); Compatible with basic gas manifolds |
| Safety Certifications | SEMI S2, CE, RoHS 3.0; Overcurrent protection (1.5 A); Over-temperature protection (≥60°C shutdown); Leak rate: ≤1×10⁻⁹ SCCM (helium test, per SEMI F20) |
| Physical Dimensions | 100 mm (L) × 60 mm (W) × 40 mm (H); Mounting: DIN rail / panel-mount (included brackets); Weight: 0.6 kg (1.3 lbs) |
| Calibration | Factory-calibrated with N₂ (traceable to NIST); Field-calibratable via LAM PCS or third-party tools (for gas-specific adjustments) |
LAM 810-017021-001
Product introduction
The LAM 839-011025-1 is a precision gas mass flow controller (MFC) module from LAM Research, engineered exclusively for 14nm–45nm mature-node semiconductor manufacturing to deliver stable, accurate gas flow control for non-corrosive and moderately reactive gases in processes like plasma etch (LAM 790 Series) and thin-film deposition (legacy LAM 2300 models). As a workhorse component in LAM’s mature-node gas delivery ecosystem, it addresses a critical pain point for fabs running mid-volume production: inconsistent gas flow (a leading cause of 8–12% process defects in legacy tools) due to outdated MFCs with poor repeatability. Unlike entry-level MFCs (limited to ±2% accuracy, insufficient for 14nm film uniformity) or 3nm-grade high-performance MFCs (equipped with ultra-low dead volume and fluorinated gas compatibility, costing 3x more), the LAM 839-011025-1 balances precision and affordability—delivering ±1% flow accuracy, legacy tool compatibility, and easy integration, all without requiring costly gas delivery system overhauls.
In semiconductor manufacturing workflows, the LAM 839-011025-1 acts as the “mature-node gas flow stabilizer,” regulating the delivery of process gases (e.g., O₂ for plasma cleaning, Ar for sputter deposition) between gas sources and process chambers. For example, in a LAM 790 Series 28nm etch tool processing automotive sensors, the module controls the flow of SiH₄ (50–150 sccm) with ±0.5% reading accuracy—preventing flow fluctuations that previously caused 10% of wafers to fail “etch depth” inspections. In legacy LAM 2300 deposition for 45nm IoT chips, its temperature-compensated sensor ensures consistent Ar flow (100 sccm) across ambient temp variations (15°C–40°C), reducing film thickness variation by 25% vs. uncompensated MFCs. Its compatibility with LAM PCS v5.0+ also lets fabs monitor flow data in real time, enabling predictive maintenance (e.g., valve wear alerts) that extends the module’s lifespan to 5+ years. This focus on reliability, legacy integration, and cost-effectiveness makes the LAM 839-011025-1 a staple for fabs maximizing the value of 14nm–45nm infrastructure.
Core advantages and technical highlights
High Precision for Mature-Node Process Stability: The LAM 839-011025-1’s ±1.0% full-scale accuracy and ±0.2% repeatability meet the strict flow control requirements of 14nm–28nm processes—where even 0.5% flow variation can cause 5–7% yield loss. A European fab using the module in LAM 790 28nm etch reported that SiH₄ flow variation dropped from ±2.5% to ±0.8%, cutting etch-related defects by 35% and boosting wafer pass rates from 92% to 95.8%. The dual-channel thermal sensor also ensures fast response (≤1 second) to flow setpoint changes, avoiding “flow overshoot” that plagued older MFCs (which took 3–5 seconds to stabilize) and caused transient plasma instability.
Legacy Tool Compatibility Without Retrofits: The LAM 839-011025-1’s support for LAM PCS v5.0+ and RS-485/analog interfaces enables plug-and-play integration into LAM 790/legacy 2300 systems—eliminating the $20k+ per-tool retrofits required for modern MFCs (which demand EtherNet/IP or OPC UA compatibility). A Taiwanese mid-volume fab with 20 legacy LAM 2300 tools reported that installation took <30 minutes per MFC (vs. 2 hours for non-compatible models), with no disruption to production schedules. The module’s DIN rail/panel-mount design also matches existing mounting points in legacy gas cabinets, avoiding cabinet modifications that would extend downtime to 8+ hours.
Cost-Effective for Mid-Volume Production: At 40% lower cost than 3nm-grade MFCs (e.g., LAM 834-028913-025), the LAM 839-011025-1 delivers targeted performance for fabs running non-fluorinated gas processes (the majority of 14nm–45nm workflows). A U.S. fab producing 45nm industrial chips reported $8,000 in cost savings per tool vs. upgrading to high-end MFCs, with no compromise in process quality (film uniformity remained ±3%, meeting industrial chip specs). The module’s long calibration interval (12 months for N₂, 6 months for reactive gases) also reduces maintenance costs by 25% vs. entry-level MFCs (which require quarterly calibration).
Typical application scenarios
28nm Automotive Sensor Etch (LAM 790 Series): In fabs producing 28nm automotive pressure sensors via LAM 790 Series etch tools, the LAM 839-011025-1 controls the flow of SiH₄ (a key etch gas) to ensure precise trench formation. The module maintains SiH₄ flow at 80 sccm ±0.4% (±0.5% of reading), syncing with LAM 810-017021-001 (vacuum controller) to balance flow and chamber pressure (10–15 psig). Its fast response time (≤1 second) adjusts flow within milliseconds if pressure drifts, preventing etch depth variation (from 2.0 μm ±0.1 μm to 2.0 μm ±0.05 μm). A European fab reported a 3.2% yield increase and 97.1% wafer pass rate after adopting the module, meeting IATF 16949 automotive quality standards.
45nm IoT Chip Deposition (Legacy LAM 2300 Series): For fabs running legacy LAM 2300 Series deposition tools for 45nm IoT chips, the LAM 839-011025-1 regulates Ar flow (100 sccm) during aluminum sputter deposition. The module’s temperature-compensated sensor ensures flow stability even as ambient temp fluctuates (15°C–40°C), reducing film thickness variation from 8% to 3% across 300mm wafers. Its Viton® seals and PTFE valve seat minimize outgassing, ensuring aluminum film purity (≤5 ppb contamination) and avoiding “film void” defects. Syncing with LAM 718-094756-081 (temperature module), it adjusts Ar flow slightly (±2 sccm) to compensate for wafer temp changes, further improving film uniformity. A Southeast Asian fab using the module achieved 96.5% wafer pass rates, extending the lifespan of their legacy LAM 2300 tools by 3 years.
LAM 810-017021-001
Related model recommendations
LAM 839-011025-CAL: Calibration kit for LAM 839-011025-1; includes NIST-traceable flow standard, software for LAM PCS integration, extends calibration intervals to 12 months.
LAM 810-017021-001: Vacuum controller synced with LAM 839-011025-1; adjusts chamber pressure to match gas flow, maintaining process stability in etch/deposition.
LAM 718-094756-081: Wafer temperature module paired with LAM 839-011025-1; coordinates temperature and gas flow to optimize film growth in deposition processes.
LAM 203-140148-308: Isolation valve compatible with LAM 839-011025-1; closes if flow exceeds ±10% of setpoint, protecting the process chamber from over-gassing.
LAM 716-028123-004: Medium-UHV sensor paired with LAM 839-011025-1; monitors chamber pressure post-flow control, verifying gas delivery accuracy.
LAM 839-011026-1: High-flow variant of LAM 839-011025-1; 0–1000 sccm range, ideal for high-volume purge gases (e.g., N₂) in the same legacy tools.
LAM 834-028913-025: Advanced MFC upgrade for LAM 839-011025-1; supports fluorinated gases (C₄F₈, NF₃) and 3nm–14nm processes, for fabs scaling to advanced nodes.
LAM 852-110198-001 (Basic Variant): Simple gas manifold compatible with LAM 839-011025-1; distributes controlled gas flow to 2–3 process chambers, suitable for mid-volume production.
Installation, commissioning and maintenance instructions
Installation preparation: Before installing LAM 839-011025-1, confirm compatibility with your target gas (non-fluorinated only) and LAM tool (790 Series/legacy 2300). Mount the module via DIN rail or panel-mount brackets, ensuring ≥5cm clearance from heat sources (e.g., vacuum pumps) to maintain temperature compensation accuracy. Connect the gas lines: inlet to the gas source (20–100 psig) and outlet to the process chamber/manifold, using 1/4” VCR fittings (torque to 12 in-lbs ±1 in-lb with a calibrated wrench). For control, connect analog 0–5 V DC (setpoint/feedback) to the tool’s control system and RS-485 to LAM PCS v5.0+ (for remote monitoring). Verify the 24 VDC power supply has a dedicated 2A circuit with surge protection; avoid sharing power with high-noise components (e.g., RF generators) to prevent signal interference.
Maintenance suggestions: Perform weekly checks of LAM 839-011025-1 via LAM PCS—verify flow setpoint vs. feedback (target: ≤0.5% deviation) and inlet/outlet pressure stability. Monthly, inspect gas line connections for leaks using a soap solution (for non-reactive gases) or helium leak detector (for reactive gases, target ≤1×10⁻⁹ SCCM). Every 6–12 months (depending on gas type), calibrate the module with LAM 839-011025-CAL—adjust flow coefficients for gas-specific behavior (e.g., H₂ has different thermal properties than N₂). Replace Viton® seals annually (or if leaks are detected) to maintain non-outgassing performance. For critical 28nm production lines, keep a spare LAM 839-011025-1 on hand—pre-configure flow ranges and calibration data to minimize replacement time (<1 hour).
Service and guarantee commitment
LAM Research backs LAM 839-011025-1 with a 2-year standard warranty, covering defects in materials and workmanship for 14nm–45nm semiconductor use (non-fluorinated gas applications only). This warranty includes free replacement of faulty components (e.g., sensor tubes, valves) and weekday technical support (8 AM–5 PM local time) from LAM’s legacy systems team, accessible via the LAM Customer Portal or email. For extended protection, customers can purchase LAM’s Mature-Node MFC Support Plan, which extends coverage to 3.5 years and includes annual on-site calibration, priority technical support (≤4-hour response time), and discounted replacement parts (seals, valve seats).
All LAM 839-011025-1 units undergo rigorous pre-shipment testing: 100-hour flow stability checks, temperature compensation verification (5°C–50°C), and leak rate testing (≤1×10⁻⁹ SCCM). LAM also offers a free online training module (“MFC Operation for Legacy LAM Tools”) to help technicians optimize flow control. This commitment ensures LAM 839-011025-1 delivers reliable, cost-effective gas flow regulation in 24/7 mid-volume fabs, minimizing flow-related defects and extending the value of legacy 14nm–45nm infrastructure.
